69. K. Sekiguchi, K. Furuichi, Y. Shiratori, and S. Noda*,
"One second growth of carbon nanotube arrays on a glass substrate by pulsed-current heating,"
Carbon 50 (6), 2110-2118 (2012).
DOI:10.1016/j.carbon.2011.12.062
68. S.W. Lee, B. M. Gallant, Y. Lee, N. Yoshida, D.Y. Kim, Y. Yamada, S. Noda, A. Yamada, and Y. Shao-Horn*,
"Self-standing positive electrodes of oxidized few-walled carbon nanotubes for light-weight and high-power lithium batteries,"
Energy Environ. Sci. 5 (1), 5437-5444 (2012).
DOI:10.1039/c1ee02409d
67. S. Isogai, R. Ohnishi, M. Katayama, J. Kubota, D.Y. Kim, S. Noda, D. Cha, K. Takanabe, and K. Domen*,
"Composite of TiN nanoparticles and few-walled carbon nanotubes and its application for electrocatalytic oxygen reduction reaction,"
Chem. Asian J.
7 (2), 286-289 (2012).
DOI:10.1002/asia.201100715
66. D.Y. Kim, H. Sugime, K. Hasegawa, T. Osawa, and S. Noda*,
"Fluidized-bed synthesis of sub-millimeter-long single walled carbon nanotube arrays,"
Carbon 50 (4), 1538-1545 (2012).
DOI:10.1016/j.carbon.2011.11.032
65. T. Moteki, Y. Murakami, S. Noda, S. Maruyama, and T. Okubo*,
"Zeolite surface as a catalyst support material for synthesis of single-walled carbon nanotubes,"
J. Phys. Chem. C 115 (49), 24231-24237 (2011).
DOI:10.1021/jp207930m
64. Y. Shiratori, K. Furuichi, Y. Tsuji, H. Sugime, and S. Noda*,
"Tailoring the morphology of carbon nanotube assemblies using microgradients in the catalyst thickness,"
Jpn. J. Appl. Phys. 50 (9), 095101-1-7 (2011).
DOI:10.1143/JJAP.50.095101
63. K. Hasegawa and S. Noda*,
"Moderating carbon supply and suppressing Ostwald ripening of catalyst particles to produce 4.5-mm-tall single-walled carbon nanotube forests,"
Carbon 49 (13), 4497-4504 (2011).
DOI:10.1016/j.carbon.2011.06.061
62. T. Yamamoto, S. Noda, and M. Kato*,
"A simple and fast method to disperse long single-walled carbon nanotubes introducing few defects,"
Carbon 49 (10), 3179-3183 (2011).
DOI:10.1016/j.carbon.2011.03.040
61. Y. Tsuji*, S. Nakamura, and S. Noda,
"Nanostructure and magnetic properties of c-axis oriented L10-FePt nanoparticles and nanocrystalline films on polycrystalline TiN underlayers,"
J. Vac. Sci. Technol. B 29 (3), 031801-1-10 (2011).
DOI:10.1116/1.3575155
60. D.Y. Kim, H. Sugime, K. Hasegawa, T. Osawa, and S. Noda*,
"Sub-millimeter-long carbon nanotubes repeatedly grown on and separated from ceramic beads in a single fluidized bed reactor,"
Carbon 49(6), 1972-1979 (2011).
DOI:10.1016/j.carbon.2011.01.022
59. K. Hasegawa and S. Noda*,
"Millimeter-tall single-walled carbon nanotubes rapidly grown with and without water,"
ACS Nano 5(2), 975-984 (2011).
DOI:10.1021/nn102380j
58. K. Hasegawa and S. Noda*,
"Real-time monitoring of millimeter-tall vertically aligned single-walled carbon nanotube growth on combinatorial catalyst library,"
Jpn. J. Appl. Phys. 49 (8), 085104-1-6 (2010).
DOI:10.1143/JJAP.49.085104
57. Y. Shiratori* and S. Noda,
"Combinatorial evaluation for field emission properties of carbon nanotubes part II - high growth rate system,"
J. Phys. Chem. C 114 (30), 12938-12947 (2010).
DOI:10.1021/jp103378c
56. Yukie Tsuji, Yoshiko Tsuji*, S. Nakamura, and S. Noda,
"Two routes to polycrystalline CoSi2 thin films by co-sputtering Co and Si,"
Appl. Surf. Sci. 256 (23), 7118-7124 (2010).
DOI:10.1016/j.apsusc.2010.05.037
55. K. Hasegawa and S. Noda*,
"Diameter increase in millimeter-tall vertically aligned single-walled carbon nanotubes during growth,"
Appl. Phys. Express 3 (4), 045103-1-3 (2010).
DOI:10.1143/APEX.3.045103
54. H. Sugime and S. Noda*,
"Millimeter-tall single-walled carbon nanotube forests grown from ethanol,"
Carbon 48 (8), 2203-2211 (2010).
DOI:10.1016/j.carbon.2010.02.024
53. S. Noda*, H. Sugime, K. Hasegawa, K. Kakehi, and Y. Shiratori,
"A simple combinatorial method aiding research on single-walled carbon nanotube growth on substrates,"
Jpn. J. Appl. Phys. 49 (2), 02BA02-1-7 (2010).
DOI:10.1143/JJAP.49.02BA02
JSAP Spotlights, Editors' Choice.
52. Y. Shiratori*, K. Furuichi, Y. Tsuji, H. Sugime, and S. Noda*,
"Efficient field emission from triode-type 1D arrays of carbon nanotubes,"
Nanotechnology 20 (47), 475707-1-7 (2009).
DOI:10.1088/0957-4484/20/47/475707
51. T.W.H. Oates*, Y. Shiratori, and S. Noda,
"Two-dimensional combinatorial investigation of Raman and fluorescence enhancement in silver and gold sandwich substrates,"
J. Phys. Chem. C 113 (22), 9588-9594 (2009).
DOI:10.1021/jp900436a
50. T.W.H. Oates*, H. Sugime, and S. Noda,
"Combinatorial surface-enhanced Raman spectroscopy and spectroscopic ellipsometry of silver island films,"
J. Phys. Chem. C 113 (12), 4820-4828 (2009).
DOI:10.1021/jp8097654
49. T.W.H. Oates* and S. Noda,
"Thickness-gradient dependent Raman enhancement in silver island films,"
Appl. Phys. Lett. 94 (5), 053106-1-3 (2009).
DOI:10.1063/1.3078272
48. H. Sugime, S. Noda*, S. Maruyama, and Y. Yamaguchi,
"Multiple "optimum" conditions for Co-Mo catalyzed growth of vertically aligned single-walled carbon nanotube forests,"
Carbon 47 (1), 234-241 (2009).
DOI:10.1016/j.carbon.2008.10.001
47. Y. Yamaguchi*, S. Noda, and H. Komiyama,
"Chemical engineering for technology innovation,"
Chem. Eng. Commun. 196 (1), 267-276 (2009).
DOI:10.1080/00986440802290029
46. Y. Shiratori, H. Sugime, and S. Noda*,
"Combinatorial evaluation for field emission properties of carbon nanotubes,"
J. Phys. Chem. C 112 (46), 17974-17982 (2008).
DOI:10.1021/jp807078h
45. K. Hasegawa, S. Noda*, H. Sugime, K. Kakehi, S. Maruyama, and Y. Yamaguchi,
"Growth window and possible mechanism of millimeter-thick single-walled carbon nanotube forests,"
J. Nanosci. Nanotechnol. 8 (11), 6123-6128 (2008).
DOI:10.1166/jnn.2008.SW17
44. K. Kakehi, S. Noda*, S. Maruyama, and Y. Yamaguchi,
"Individuals, grasses, and forests of single- and multi-walled carbon nanotubes grown by supported Co catalysts of different nominal thicknesses,"
Appl. Surf. Sci. 254 (21), 6710-6714 (2008).
DOI:10.1016/j.apsusc.2008.04.050
43. T.W.H. Oates*, A. Keller, S. Noda, and S. Facsko,
"Self-organized metallic nanoparticle and nanowire arrays from ion-sputtered silicon templates,"
Appl. Phys. Lett. 93 (6), 063106-1-3 (2008).
DOI:10.1063/1.2959080
42. Shiratori, K. Furuichi, S. Noda*, H. Sugime, Y. Tsuji, Z. Zhang, S. Maruyama, and Y. Yamaguchi,
"Field emission properties of single-walled carbon nanotubes with a variety of emitter-morphologies,"
Jpn. J. Appl. Phys. 47 (6), 4780-4787 (2008).
DOI:10.1143/JJAP.47.4780
41. K. Kakehi, S. Noda*, S. Maruyama, and Y. Yamaguchi,
"Growth valley dividing single- and multi-walled carbon nanotubes: combinatorial study of nominal thickness of Co catalyst,"
Jpn. J. Appl. Phys. 47 (4), 1961-1965 (2008).
DOI:10.1143/JJAP.47.1961
40. Y. Tsuji, M. Mizukami, and S. Noda*,
"Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si,"
Thin Solid Films 516 (12), 3989-3995 (2008).
DOI:10.1016/j.tsf.2007.08.002
39. Y. Tsuji*, S. Noda, and Y. Yamaguchi,
"Structure and magnetic property of c-axis oriented L10-FePt nanoparticles on TiN/a-Si underlayers,"
J. Vac. Sci. Technol. B 25 (6), 1892-1895 (2007).
DOI:10.1116/1.2803726
38. Y. Tsuji*, S. Nakamura, and S. Noda,
"Spontaneous formation of Si nanocones vertically aligned to Si wafers,"
J. Vac. Sci. Technol. B 25 (3), 808-812 (2007).
DOI:10.1116/1.2734976
37. S. Noda*, K. Hasegawa, H. Sugime, K. Kakehi, Z. Zhang, S. Maruyama, and Y. Yamaguchi,
"Millimeter-thick single-walled carbon nanotube forests: hidden role of catalyst support,"
Jpn. J. Appl. Phys. 46 (17), L399-L401 (2007). (Express Letter)
http://jjap.ipap.jp/link?JJAP/46/L399/
DOI:10.1143/JJAP.46.L399
Most Cited Articles 2010,
Free Download.
36. Y. Kajikawa*, K. Abe, and S. Noda,
"Filling the gap between researchers studying different materials and different methods: a proposal of structured keywords,"
J. Inf. Sci. 32 (6), 511-524 (2006).
DOI:10.1177/0165551506067125
35. K. Kakehi, S. Noda*, S. Chiashi, and S. Maruyama,
"Supported Ni catalysts from nominal monolayer grow single-walled carbon nanotubes,"
Chem. Phys. Lett. 428 (4-6), 381-385 (2006).
DOI:10.1016/j.cplett.2006.07.039
34. S. Noda*, H. Sugime, T. Osawa, Y. Tsuji, S. Chiashi, Y. Murakami, and S. Maruyama,
"A simple combinatorial method to discover Co-Mo binary catalysts that grow vertically aligned single-walled carbon nanotubes,"
Carbon 44 (8), 1414-1419 (2006).
DOI:10.1016/j.carbon.2005.11.026
33. S. Inasawa*, M. Sugiyama, S. Noda, and Y. Yamaguchi,
"Spectroscopic study of laser-induced phase transition of gold nanoparticles on nanosecond time scales and longer,"
J. Phys. Chem. B 110 (7),3114-3119 (2006).
DOI:10.1021/jp057175l
32. S. Noda*, Y. Tsuji, A. Sugiyama, A. Kikitsu, F. Okada, and H. Komiyama,
"c-Axis oriented face-centered-tetragonal-FePt nanoparticle monolayer formed on a polycrystalline TiN seed layer,"
Jpn. J. Appl. Phys. 44 (11), 7957-7961 (2005).
DOI:10.1143/JJAP.44.7957
31. S. Noda*, Y. Tsuji, Y. Murakami, and S. Maruyama,
"Combinatorial method to prepare metal nanoparticles that catalyze the growth of single-walled carbon nanotubes,"
Appl. Phys. Lett. 86 (17), 173106-1-3 (2005).
DOI:10.1063/1.1920417
Selected for the May 2, 2005 issue of Virtual Journal of Nanoscale Science & Technology.
30. Y. Kajikawa* and S. Noda,
"Growth mode during initial stage of chemical vapor deposition,"
Appl. Surf. Sci. 245 (1-4), 281-289 (2005).
DOI:10.1016/j.apsusc.2004.10.021
29. H. Komiyama*, Y. Yamaguchi, and S. Noda,
"Structuring knowledge on nanomaterials processing,"
Chem. Eng. Sci. 59 (22-23), 5085-5090 (2004).
DOI:10.1016/j.ces.2004.09.025
28. S. Noda*, T. Tsumura, J. Fukuhara, T. Yoda, H. Komiyama, and Y. Shimogaki,
"Stranski-Krastanov growth of tungsten during chemical vapor deposition revealed by micro-Auger electron spectroscopy,"
Jpn. J. Appl. Phys. 43 (10), 6974-6977 (2004).
DOI:10.1143/JJAP.43.6974
27. S. Noda*, R. Hirai, H. Komiyama, and Y. Shimogaki,
"Selective silicidation of Co using silane or disilane for anti-oxidation barrier layer in Cu metallization,"
Jpn. J. Appl. Phys. 43 (9A), 6001-6007 (2004).
DOI:10.1143/JJAP.43.6001
26. Y. Kajikawa*, S. Noda, and H. Komiyama,
"A simple index to restrain abnormal protrusions in films fabricated using CVD under diffusion-limited conditions,"
Chem. Vap. Deposition 10 (4), 221- 228 (2004).
DOI:10.1002/cvde.200306285
25. Y. Kajikawa*, S. Noda, and H. Komiyama,
"Use of process indices for simplification of the description of vapor deposition systems,"
Mater. Sci. Eng. B 111 (2-3), 156-163 (2004).
DOI:10.1016/j.mseb.2004.04.013
24. Y. Kajikawa*, T. Tsumura, S. Noda, H. Komiyama, and Y. Shimogaki,
"Nucleation of W during chemical vapor deposition from WF6 and SiH4,"
Jpn. J. Appl. Phys. 43 (6B), 3945-3950 (2004).
DOI:10.1143/JJAP.43.3945
23. Y. Kajikawa*, T. Tsuchiya, S. Noda, and H. Komiyama,
"Incubation time during the CVD of Si onto SiO2 from silane,"
Chem. Vap. Deposition 10 (3), 128-133 (2004).
DOI:10.1002/cvde.200304165
22. M. Hu, S. Noda*, T. Okubo, and H. Komiyama,
"Wettability and crystalline orientation of Cu nanoislands on SiO2 with a Cr underlayer,"
Appl. Phys. A 79 (3), 625-628 (2004).
DOI:10.1007/s00339-004-2604-3
21. S. Noda*, K. Tanabe, T. Yahiro, T. Osawa, and H. Komiyama,
"Reaction of Si with HCl to form chlorosilanes: Time dependent nature and reaction model,"
J. Electrochem. Soc. 151 (6), C399-C404 (2004).
DOI:10.1149/1.1737386
20. S. Noda*, Y. Kajikawa, and H. Komiyama,
"Combinatorial masked deposition: Simple method to control deposition flux and its spatial distribution,"
Appl. Surf. Sci. 225 (1-4), 372-379 (2004).
DOI:10.1016/j.apsusc.2003.10.027
19. S. Noda*, K. Tepsanongsuk, Y. Tsuji, Y. Kajikawa, Y. Ogawa, and H. Komiyama,
"Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering,"
J. Vac. Sci. Technol. A 22 (2), 332-338 (2004).
DOI:10.1116/1.1647593
18. T. Q. Li*, S. Noda*, F. Okada, and H. Komiyama,
"Effects of substrate heating and biasing on manostrcutural evolution of nonepitaxially growth TiN nanofilms,"
J. Vac. Sci. Technol. B 21 (6), 2512-2516 (2003).
DOI:10.1116/1.1621654
17. Y. Kajikawa*, S. Noda, and H. Komiyama,
"Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides,"
J. Vac. Sci. Technol. A 21 (6), 1943-1954 (2003).
DOI:10.1116/1.1619414
16. T. Q. Li*, S. Noda*, H. Komiyama; T. Yamamoto, and Y. Ikuhara,
"Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation,"
J. Vac. Sci. Technol. A 21 (5), 1717-1723 (2003).
DOI:10.1116/1.1598975
15. M. Hu*, S. Noda*, T. Okubo, Y. Yamaguchi, and H. Komiyama,
"Structural and morphological control of nanosized Cu islands on SiO2 using a Ti underlayer,"
J. Appl. Phys. 94 (5), 3492- 3497 (2003).
DOI:10.1063/1.1597972
14. M. Hu*, S. Noda*, and H. Komiyama,
"Amorphous-to-crystalline transition during the early stages of thin film growth of Cr on SiO2,"
J. Appl. Phys. 93 (11), 9336- 9344 (2003).
DOI:10.1063/1.1571214
13. Y. Kajikawa*, S. Noda, and H. Komiyama,
"Mechanisms controlling preferred orientation of chemical vapor deposited polycrystalline films,"
Solid St. Phenomena 93, 411- 416 (2003).
12. M. Hu*, S. Noda, and H. Komiyama,
"A new insight into the growth mode of metals on TiO2(110),"
Surf. Sci. 513 (3), 530-538 (2002).
DOI:10.1016/S0039-6028(02)01856-3
11. Y. Kajikawa*, S. Noda, and H. Komiyama,
"Preferred orientation of chemical vapor deposited polycrystalline silicon carbide films,"
Chem. Vap. Deposition 8 (3), 99-104 (2002).
DOI:10.1002/1521-3862(20020503)8:3<99::AID-CVDE99>3.0.CO;2-C
10. S. Noda*, Y. Kajikawa, and H. Komiyama,
"Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films,"
Chem. Vap. Deposition 8 (3), 87-89 (2002).
DOI:10.1002/1521-3862(20020503)8:3<87::AID-CVDE87>3.0.CO;2-Q
9. M. Hu*, S. Noda, Y. Tsuji, T. Okubo, Y. Yamaguchi, and H. Komiyama,
"Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates,"
J. Vac. Sci. Technol. A 20 (3), 589-596 (2002).
DOI:10.1116/1.1458941
8. T. Q. Li*, S. Noda, Y. Tsuji, T. Osawa, and H. Komiyama,
"Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111),"
J. Vac. Sci. Technol. A 20 (3), 583-588 (2002).
DOI:10.1116/1.1458944
7. Y. Kajikawa*, H. Ono, S. Noda, and H. Komiyama,
"Growth of trumpet-like protrusions during the CVD of silicon carbide films,"
Chem. Vap. Deposition 8 (2), 52-55 (2002).
DOI:10.1002/1521-3862(20020304)8:2<52::AID-CVDE52>3.0.CO;2-R
6. X.-D. Liu*, H. Funakubo, S. Noda, and H. Komiyama,
"Internal microstructure and formation mechanism of surface protrusions in Pb-Ti-Nb-O thin film prepared by MOCVD,"
Chem. Vap. Deposition 7 (6), 253-259 (2001).
DOI:10.1002/1521-3862(200111)7:6<253::AID-CVDE253>3.0.CO;2-1
5. M. Hu*, S. Noda, T. Okubo, Y. Yamaguchi, and H. Komiyama,
"Structure and morphology of self-assembled 3-mercaptopropyltrimethoxysilane layers on silicon oxide,"
Appl. Surf. Sci. 181 (3-4), 307-316 (2001).
DOI:10.1016/S0169-4332(01)00399-3
4. M. Yamamoto*, S. Ona, S. Noda, and M. Sadakata,
"NO reduction under the excess O2 condition by porous VYCOR catalyst,"
J. Chem. Eng. Jpn. 34 (6), 834-839, (2001).
J-Stage
3. X.-D. Liu*, H. Funakubo, S. Noda, and H. Komiyama,
"Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition,"
J. Electrochem. Soc. 148 (3), C227-C230 (2001).
DOI:10.1149/1.1349880
2. S. Noda*, M. Nishioka, and M. Sadakata,
"Gas-phase hydroxyl radical emission in the thermal decomposition of lithium hydroxide,"
J. Phys. Chem. B 103 (11), 1954-1959 (1999).
DOI:10.1021/jp984238
1. S. Noda*, M. Nishioka, A. Harano, and M. Sadakata,
"Gas-phase hydroxyl radical generation by the surface reactions over basic metal oxides,"
J. Phys. Chem. B 102 (17), 3185-3191 (1998).
DOI:10.1021/jp9731314
Reviewed original papers (in Japanese)
4. H. Sasakura, S. Noda, and Y. Yamaguchi,
"Novel analytical method of nanoparticle dispersibility in polymer nanocomposites; TEM-CT and 3D topological analysis,"
J. Ceram. Soc. Jpn. 114 (1331), 638-642 (2006) (in Japanese).
J-STAGE:jcersj/114/1331/114_638/
3. A. Inaba, Y. Kondo, M. Kobayashi, H. Kita, N. Takahashi, S. Noda, S. Matsumoto, H. Morita, and H. Komiyama,
"Reduction of CO2 emission for the introduction of solar photovoltaic energy systems,"
Energy and Resources 16 (5), 532-537 (1995) (in Japanese).
2. A. Inaba, Y. Kondo, M. Kobayashi, H. Kita, N. Takahashi, S. Noda, S. Matsumoto, H. Morita, and H. Komiyama,
"Life cycle assessment for solar photovoltaic energy system,"
Energy and Resources 16 (5), 525-531 (1995) (in Japanese).
1. A. Inaba, Y. Kondo, M. Kobayashi, H. Kita, N. Takahashi, S. Noda, S. Matsumoto, H. Morita, and H. Komiyama,
"Life cycle inventory for solar photovoltaic power generation systems,"
Resources and Environment 4 (4), 321-34 (1995) (in Japanese).
International Conference Proceedings
13. K. Furuichi, Y. Shiratori, K. Sekiguchi, H. Sugime, and S. Noda,
"A 1-sec Implementation of CNT-Emitter Arrays on Glasses for BLUs,"
Digest of Technical Papers - Society for Information Display International Symposium, 40(Bk. 1), 139-141 (2009).
12. M. Hu, S. Noda, H. Komiyama,
"Nanostructural evolution in non-epitaxial growth of thin films,"
Materials Research Society Symposium Proceedings, 2006-961E, O05-04 (2007).
11. S. Noda,
"Structuring knowledge on materials technology: general understanding of phenomena occurring in materials and its practical applications,"
The Third International Conference on Nanotechnology (JAPAN NANO 2005), P3-15, Tokyo, Japan, Feb. 2005.
10. S. Noda and H. Komiyama,
"Nanostructural evolution by non-epitaxial growth,"
Proc. 10th Asian Pacific Confederation of Chemical Engineering, 4C-07, Kitakyushu, Japan, Oct. 2004.
9. Y. Tsuji, S. Noda, and H. Komiyama,
"Epitaxial lift-off technology for solar cell application,"
Proc. 10th Asian Pacific Confederation of Chemical Engineering, 3D-11, Kitakyushu, Japan, Oct. 2004.
8. K. Kakehi, S. Noda, and F. Okada,
"Phase transition from semiconductor to insulator observed in rare gas- and halogen-doped SiOx thin films,"
Proc. 10th Asian Pacific Confederation of Chemical Engineering, 3D-10, Kitakyushu, Japan, Oct. 2004.
7. Y. Shimogaki, M. Sugiyama, S. Noda, and H. Komiyama,
"Initial nucleation and growth in fabrication of metal thin films by chemical vapor deposition,"
Proc. 10th Asian Pacific Confederation of Chemical Engineering, 3P-08-051, Kitakyushu, Japan, Oct. 2004.
6. Y. Shimogaki, T. Iino, M. Sugiyama, T. Momose, Y. S. Kim, T. Tsumura, Y. Kajikawa, S. Noda, and H. Komiyama,
"The initial nucleation behavior during Al, Cu, W-CVD on barrier metal layers,"
Proceedings of Material Research Society 2004 Spring Meeting, F8.10, San Francisco, April 12-16, 2004.
5. R. Hirai, S. Noda, H. Komiyama, and Y. Shimogaki,
"Selective silicidation of cobalt using SiH4 and Si2H6 for Cu metallization,"
Proceedings of the Advanced Metallization Conference 2002 (AMC 2002), San Diego, October 1-3, 2002, Materials Research Society, Conf. Proc. ULSI XVIII, 427-431 (2003).
4. S. Noda, K. Hagiwara, O. Ichikawa, K. Tanabe, T. Yahiro, H. Ohkawa, T. Osawa, and H. Komiyama,
"Closed recycle CVD process for mass production of SOG-Si from MG-Si,"
Conf. Rec. IEEE Photovoltaic Specialists Conf. 2002, 29th, 308-311.
3. Y. Tsuji, S. Noda, M. Mizukami, and H. Komiyama,
"Epitaxial technology of Si/CoSi2/Si layers for solar cell application,"
Conf. Rec. IEEE Photovoltaic Specialists Conf. 2002, 29th, 289-292.
2. M. Hu, S. Noda, Y. Ogawa, Y. Tsuji, T. Okubo, Y. Yamaguchi, and H. Komiyama,
"Study of initial growth of Cu on SiO2 and 3-mercaptopropyltrimethoxysilane-coated SiO2,"
Proc. Electrochem. Soc. 2001-13 (Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Deposition II), 41-46 (2001).
1. K. Tepsanongsuk, S. Noda, Y. Tsuji, and H. Komiyama,
"The structure control of sputtered TaN films on SiO2 through the study of evolutionary selection growth,"
Proc. Adv. Metall. Conf. 2000, 409-412 (2000).
Reviews/ Commentaries
3. S. Noda
"Custom production and application of carbon nanotubes"
Kagaku Kogaku，74 (11)，629-631 (2010) (in Japanese).
2. S. Noda,
"Development of CNT production methods by the combinatorial methodology,"
NEW DIAMOND，89-24 (2)，32-33 (2008) (in Japanese).
1. S. Noda,
"Approach from chemical engineering to the synthesis of single-walled carbon nanotubes,"
Chemical Engineering, 51 (8)，32-37 (2006) (in Japanese).
Patents
25. S. Noda, T. Osawa, D.Y. Kim, E. Haba, and S. Ueda,
"Apparatus for producing nanocarbon material and method for producing nanocarbon material,"
PCT Int. Appl. (2011), WO 2011/102433 A1, 20110825.
24. S. Noda, S. Morokuma, and T. Yamamoto,
"Silicon film and lithium secondary cell,"
PCT Int. Appl. (2011), WO 2011/071154 A1, 20110616.
23. S. Noda, D.Y. Kim, T. Osawa, H. Sugime, K. Hasegawa, and E. Haba,
"Method and apparatus for simultaneously producing carbon nanotubes and hydrogen,"
PCT Int. Appl. (2011), WO 2011/030821 A1, 20110317.
22. S. Noda and K. Furuichi,
"Chemical vapor deposition apparatus and chemical vapor deposition method,"
Jpn. Kokai Tokkyo Koho (2010), JP201132120, 20110217.
21. S. Noda and K. Furuichi,
"Planar light-emitting devices including carbon nanotube emitters,"
Jpn. Kokai Tokkyo Koho (2010), JP2010108723, 20100513.
20. S. Noda and K. Furuichi,
"Method for forming carbon nanotube,"
PCT Int. Appl. (2010), 31 pp. WO 2010/050517 A1, 20100506.
19. S. Noda, K. Furuichi, Y. Shiratori, Y. Tsuji, and H. Sugime,
"Field emission device having slit structure and protruding carbon nanotube emitter,"
Jpn. Kokai Tokkyo Koho (2009), JP2009245672, 20091022.
18. S. Noda, H. Sugime, Y. Yamaguchi, T. Ohsawa, K. Kakei, K. Hasegawa, and D.Y. Kim,
"Carbon nanotube manufacturing method and carbon nanotube manufacturing apparatus.
PCT Int. Appl. (2009), 56 pp. WO 2009/110591 A1, 20090911.
17. S. Noda and S. Takashima,
"Process for embedding metal and equipment for depositing metal in recesses,"
PCT Int. Appl. (2009), 35pp. WO 2009/102056 A1, 20090820.
16. S. Noda, H. Sugime, Y. Yamaguchi,
"Catalytic CVD process for production of carbon nanotube,"
PCT Int. Appl. (2008), 45pp. WO 2008/029927 A1, 20080313.
15. K. Jun, H. Sakamoto, S. Noda,
"Thin film preparation apparatus,"
Jpn. Kokai Tokkyo Koho (2007), JP2007191729, 20070802.
14. S. Noda,
"Magnetic recording media and process for producing the same,"
Jpn. Kokai Tokkyo Koho (2007), JP2007026558, 20070201.
13. S. Noda,
"Carbon nanotube device and process for producing the same,"
PCT Int. Appl. (2006), 30 pp. WO 2006/011468 A1, 20060202.
12. S. Noda, S. Maruyama,
"Carbon nanotube device and process for producing the same,"
Jpn. Kokai Tokkyo Koho (2006), JP2006035379, 20060209.
11. H. Sakamoto, S. Noda,
"Apparatus and method for formation of thin films,"
Jpn. Kokai Tokkyo Koho (2005), 19 pp., JP2005240091, A2 20050908.
10. E. Suetomi, K. Fukazawa, Y. Shimogaki, M. Sugiyama, S. Noda,
"The simulation system or the simulation method which uses the hybrid reaction model,"
Jpn. Kokai Tokkyo Koho (2005), 13 pp., JP2005217276, A2 20050811.
9. S. Noda,
"Process for producing monocrystal thin film and monocrystal thin film device,"
PCT Int. Appl. (2005), 54 pp. WO 2005/069356 A1, 20050728.
8. H. Sakamoto, S. Noda,
"Method and apparatus for vapor deposition of metal thin films,"
Jpn. Kokai Tokkyo Koho (2005), 35 pp., JP2005139476, A2 20050602.
7. S. Noda,
"Manufacture of nano-particle device,"
PCT Int. Appl. (2005), 44 pp. WO 2005/022565 A1, 20050310.
6. Y. Tsuji, S. Noda,
"Conical microstructure and its fabrication,"
Jpn. Kokai Tokkyo Koho (2005), 19 pp., JP2005063798, A2 20050310.
5. H. Komiyama, Y. Yamaguchi, S. Noda,
"Material design supporting method and its system,"
Jpn. Kokai Tokkyo Koho (2003), JP2003-178102, A2 20030627.
4. H. Komiyama, S. Noda, and M. Iwama,
"Manufacture of crystal thin film having large grain size from amorphous film,"
Jpn. Kokai Tokkyo Koho (2003), 4 pp., JP2003-133231, A2 20030509.
3. H. Komiyama; S. Noda, and Y. Tsuji,
"Method for manufacturing objective film, objective film obtained by the method, and laminated structure,"
PCT Int. Appl. (2002), 36 pp. CODEN: PIXXD2 WO 2002/40751 A1, 20020523.
2. H. Komiyama, K. Okuyama, M. Matsukata, Y. Egashira, and S. Noda,
"Structure analysis system, analysis method, and data structure,"
Jpn. Kokai Tokkyo Koho (2001), 20 pp., JP2001-249946, A2 20010914.
1. S. Noda and M. Sadakata,
"Oxidation of waste gases by solid-gas-solid catalytic reaction,"
Jpn. Kokai Tokkyo Koho (2000), 6 pp., JP2000-237544, A2 20000905.